SnS2/C3N5 异质结光催化剂的制备及其高效制氢和有机污染物降解

Fabrication of SnS2/C3N5 heterojunction photocatalyst for highly efficient hydrogen production and organic pollutant degradation

  • 摘要: 半导体光催化剂在氢能源和环境领域具有广泛的应用。本研究将非金属聚合物材料g-C3N5与SnS2结合,合成新的 II 型异质结 SnS2/C3N5。光催化制氢实验表明,5% SnS2/C3N5产氢量为922.5 μmol/(h·g),是纯g-C3N5的3.6 倍。另外,亚甲基蓝(MB)光催化降解实验表明,5% SnS2/C3N5 可在 40 min内降解 95% 的污染物,表现出良好的光催化降解性能。机理研究表明,SnS2/C3N5 异质结提高了光生电荷迁移速率并降低了电子-空穴复合速率,有效促进了g-C3N5 的光催化性能。这项工作为设计具有高效产氢活性和光催化降解性能的富氮碳基光催化剂提供了新思路。

     

    Abstract: The semiconductor photocatalysis are considered as one of the most promising candidates in hydrogen energy source and environmental remediation area. In this paper, flower-shaped SnS2 is successfully combined on g-C3N5, and the well matching band structure successfully constitutes a new Type-II heterojunction. As expected, the photocatalytic hydrogen production experiment showed that the quantity of hydrogen produced on 5% SnS2/C3N5 was 922.5 μmol/(h·g), which is 3.6 times higher than that of pure g-C3N5. Meanwhile, in photocatalytic degradation of methylene blue, 5% SnS2/C3N5 composite material can degrade 95% of contaminants within 40 minutes, showing good photocatalytic degradation performance. The mechanism study indicates that SnS2/C3N5 heterojunction improves the photogenerated charge migration rate and reduces the electron-hole recombination rate, and effectively improves the photocatalytic performance of g-C3N5. This work provides a new idea for designing C3N5-based heterojunctions with efficient hydrogen production and degradation performance.

     

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