Abstract:
Photocatalytic H
2O
2 production has attracted much attention due to its green and sustainable advantages, in which constructing an efficient photocatalyst is the key. As a new semiconductor material, g-C
3N
4 has the advantages of good thermal stability, chemical stability and visible light response ability. Therefore, g-C
3N
4 has gradually become a research hotspot in the field of photocatalysis. In this paper, NiS/g-C
3N
4 is successfully prepared NiS/g-C
3N
4 by impregnation method, and the characterization indicates that the introduction of NiS increases the reactive sites of g-C
3N
4 and constructs abundant charge transport channels, which is conducive to the migration and separation of photogenerated carriers at the interface. The synthesized NiS/g-C
3N
4 was used for the photocatalytic H
2O
2 production under visible light without the introduction of additional sacrificial agents. The results show that H
2O
2 yield of NiS/g-C
3N
4 (3%) can reach 141.81 μM in 120 min, which is 3.8 times higher than that of bulk g-C
3N
4.The stability of the prepared samples was investigated by cycling experiments of photocatalytic H
2O
2 production. The trapping agent experiment of the active group in the photocatalytic hydrogen peroxide production is carried out. Based on the analysis of the results, the possible photocatalytic mechanism of the photocatalytic hydrogen peroxide production by NiS/g-C
3N
4 heterojunction is proposed.